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Standard
IXTH 41N25
V DSS
= 250 V
Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
I D(cont) = 41 A
R DS(on) = 72 m ?
Symbol
Test conditions
Maximum ratings
V DSS
V DGR
V GS
T J = 25°C to 150°C
T J = 25°C to 150°C; R GS = 1.0 M ?
Continuous
250
250
±20
V
V
V
TO-247 AD
V GSM
I D25
I DM
I AR
Transient
T C = 25 ° C MOSFET chip capability
T C = 25 ° C, pulse width limited by T JM
±30
41
164
41
V
A
A
A
G
D
S
D (TAB)
E AR
E AS
dv/dt
P D
T J
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 150 ° C, R G = 2 ?
= 25 ° C
T C
30
1.0
5
300
-55 ... +150
mJ
J
V/ns
W
° C
G = Gate
S = Source
Features
D = Drain
Tab = Drain
T JM
T stg
M d
Mounting torque
150
-55 ... +150
1.13/10
° C
° C
Nm/lb.in.
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? International standard package
Weight TO-264
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
6
300
g
° C
JEDEC TO-247 AD
? Fast switching times
? High commutating dv/dt rating
Applications
? Motor controls
Symbol Test Conditions
(T J = 25°C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
? DC choppers
? Switched-mode
power supplies
and resonant-mode
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ±20 V DC, V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125°C
250
2.0
4.0
±100
25
250
V
V
nA
μ A
μ A
? Uninterruptible Power Supplies (UPS)
Advantages
? Easy to mount with one screw
(isolated mounting screw hole)
? Space savings
R DS(on)
V GS = 10 V, I D = 15A
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
60
72 m ?
? High power density
? 2003 IXYS All rights reserved
DS98954B(08/03)
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